shantou huashan electronic devices co.,ltd . bi - directional triode thyristor (triac) ? features * repetitive peak off - state voltage: 800v * r.m.s on - state current(i t(rms) =1a) * high commutation dv/d t ? general description the triac HTR1A80 is suitable for ac switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. ? absolute maximum ratin gs ? t a =25 ??? t stg ?a?a storage temperature ?-?-?-?-?- ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- - 40~125 ?? t j ?a?a operating junction temperature ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- - 40~125 ?? p gm ?a?a peak gate power dissipation ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 1w p g ? av ? ?a?a average gate power dissipation ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 0.1w v drm ?a?a repetitive peak off - state volta ge ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 800v i t ? rms ? ?a?a r.m.s on - state current ? ta=58 ??? ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 1a v gm ?a?a peak gate voltage ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 6v i gm ?a?a peak gate current ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 0.5a i tsm ?a?a surge on - state current (one cycle, 50/60hz,peak,n on - repetitive) ?-?-?-?-?-?- 9.1/10a HTR1A80
shantou huashan electronic devices co.,ltd . ? electrical characteristics ? t a =25 ?? ? symbol items min. typ. max. unit conditions i drm repetitive peak off - state current 0.5 ma v d =v drm , single phase, half wave, t j =125 ?? v tm peak on - state voltage 1.6 v i t =1.5a, inst. measurement i+ gt1 gate trigger current ??? 5.0 ma v d =6v, r l =10 ohm i - gt1 gate trigger current ?v? 5.0 ma v d =6v , r l =10 ohm i - gt3 gate trigger current ?t? 5.0 ma v d =6v, r l =10 ohm i+ gt3 gate trigger current ??? 10.0 ma v d =6v, r l =10 ohm v+ gt1 gate trigger voltage ??? 1.8 v v d =6v, r l =10 ohm v - gt1 gate trigger voltage ?v? 1.8 v v d =6v, r l =10 ohm v - gt3 gate trigg er voltage ?t? 1.8 v v d =6v, r l =10 ohm v+ gt3 gate trigger voltage ??? 2.0 v v d =6v, r l =10 ohm v gd non - t rigger gate voltage 0.2 v tj=125 ?? ,v d =1/2v drm (dv/dt)c critical rate of rise of off - state voltage at commutation 2.0 v/s tj=125 ?? ,v d =2/3v drm (di/dt )c= - 0.5a/ms i h holding current 10 ma rth(j - c) thermal resistance 50 ?? /w junction to case rth(j - a) thermal resistance 120 ?? /w junction to ambient HTR1A80
shantou huashan electronic devices co.,ltd . ? performance curves f ig 1. gate characteristics fig 2. on - state voltage gate current ? ma ? on - state voltage ? v ? fig 3 . gate trigger voltage vs. junction fig 4 . on state current vs. maximum temperature power dissipation fig 5 . on state current vs. fig 6 . surge on - state current rating allowable case temperature ( non - repetitive ) rms on - state current [ a] time ? cycles ? allowable case temp. [ ?? c] surge on - state current [a] power dissipation [w] on - state current [a] htr1a 80 gate voltage (v) rms on - state current [a] junction temperature [ ?? ]
shantou huashan electronic devices co.,ltd . fig 7. gate trigger current vs. fig 8. transient thermal impedance junction temperature junction temperature [ ?? ] time ? sec ? fig 9. gate trigger characteristics test circuit fig 9. gate trigger characteristics test circuit ht r1 a80 transient thermal impedance [ ?? /w ] 10 |? 10 |? 10 |? 10 |? junction temperature [ ?? ] time ? sec ? test procedure ? test procedure v test procedure t test procedure ?
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